New method for preparing graphene by peeling graphite and facile fabrication of bulk Bi0.45Sb1.55Te3.02/graphene composites with dense texture and high ZT
New method for preparing graphene by peeling graphite and facile fabrication of bulk Bi0.45Sb1.55Te3.02/graphene composites with dense texture and high ZT
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石墨剥离制备石墨烯新方法及易制备致密织构高ZT块体Bi0.45Sb1.55Te3.02/石墨烯复合材料
DOI：
10.1039/c5ra06463e
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发表时间：
2015-05
期刊：
影响因子：
3.9
通讯作者：
Qinyu He
中科院分区：
文献类型：
--
作者：
Jingying cui;Shanming Li;Qing Hao;Huaizhou Zhao;Hongbo Zhao;Weiqian Li;Yinzhen Wang;Wei Li;Qinyu He
We report a new method for peeling graphite to graphene, with which we develop a facile procedure for the fabrication of bulk Bi0.45Sb1.55Te3.02/graphene by pushing thin graphite foils into pressed Bi0.45Sb1.55Te3.02 powders and then foliated into graphene under pressure and high direct current (up to 1000 A). The pushing force results from the huge repulsive Coulomb force between the layers in the graphite foil. The Coulomb force arises from electron agglomeration as a result of the Lorentz force that the large direct-current-produced magnetic field applies on the moving electrons in the graphite foil. The incorporated graphene sheets act as growth templates for the Bi0.45Sb1.55Te3.02 grains. Consequently, fast grain growth and a densely textured microstructure with laminates were observed in the Bi0.45Sb1.55Te3.02/graphene bulk. By combining direct current and applied pressure, anisotropic textures were obtained, with the laminates oriented mostly along the axial direction. Since the laminates can filter low-energy carriers and scatter long-distance phonons, an increased Seebeck coefficient, decreased thermal conductivity, and a consequential 25% enhancement in the figure of merit, ZT (1.40 at 90.9 °C), were observed in the direction along which pressure was applied. This work suggests that graphene can be utilized as a template to rapidly grow single crystals of materials with similar crystal structures, as well as to adjust the textures of materials. This facile method is expected to be applicable in the fabrication of bulk semiconductor or graphene/alloy composites.
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影响因子：
56.9
作者：
Nair, R. R.;Blake, P.;Geim, A. K.
通讯作者：
Geim, A. K.
DOI：
10.1002/pssa.201330051
发表时间：
2014-01-01
影响因子：
2
作者：
Chu, Ke;Jia, Chengchang
通讯作者：
Jia, Chengchang
影响因子：
3.5
作者：
Fan Ping;Zheng Zhuanghao;Liang Guangxing;Cai Xing-min;Zhang Dong-ping
通讯作者：
Fan Ping;Zheng Zhuanghao;Liang Guangxing;Cai Xing-min;Zhang Dong-ping
影响因子：
17.1
作者：
Shuai Wang;B. Goh;K. Manga;Q. Bao;Ping Yang;K. Loh
通讯作者：
Shuai Wang;B. Goh;K. Manga;Q. Bao;Ping Yang;K. Loh
影响因子：
2.1
作者：
D. Vasilevskiy;M. Dawood;J. Masse;S. Turenne;R. Masut
通讯作者：
D. Vasilevskiy;M. Dawood;J. Masse;S. Turenne;R. Masut