Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices
Accurate Boundary Condition for Short-Channel Effect Compact Modeling in MOS Devices
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DOI：
10.1109/ted.2014.2368395
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发表时间：
2015-01-01
影响因子：
3.1
通讯作者：
Ghibaudo, Gerard
中科院分区：
文献类型：
--
作者：
Hiblot, Gaspard;Dutta, Tapas;Ghibaudo, Gerard
在本文中，在结的边缘的边界条件进行了讨论，并在MOSFET的短沟道效应（SCE）的紧凑模型的后果进行了研究。首先指出，当考虑轻掺杂漏区或薄间隔层的影响时，以前的电压掺杂转换（VDT）电势模型与模拟结果不一致。然后，提出了一种解决方案，以使用在沟道边缘处的更精确的边界条件来校正沟道电势模型，该边界条件包括计算在源极和漏极处的精确的有效内建电势值V-bi（eff）。这些改进的边界条件的紧凑模型的SCES的影响进行了研究。结果表明，以前的VDT模型的漏致势垒降低和亚阈值摆动的所有类型的完全耗尽型器件可以非常简单地纠正精细同意模拟没有拟合参数。这些模型最终允许调查的结的掺杂浓度对器件性能的影响。
In this paper, the boundary conditions at the edges of the junctions are discussed, and their consequences on the compact modeling of short-channel effects (SCEs) in MOSFETs are investigated. It is first shown that the previous voltage-doping transform (VDT) potential model does not agree with the simulation results when the impact of lightly doped drain regions or thin spacers are considered. A solution is then proposed to correct the channel potential model using more accurate boundary conditions at the edges of the channel, which consist in calculating an accurate effective built-in potential value V-bi(eff) at the source and at the drain. The impact of these improved boundary conditions on compact models of SCEs is investigated. It is shown that the previous VDT models of drain-induced barrier lowering and subthreshold swing for all types of fully depleted devices can be very simply corrected to finely agree with the simulations without fitting parameters. These models finally allow to investigate the impact of the doping concentration of the junctions on the device performance.