Probability Distribution of the Write-Error Rate of Voltage-Controlled Magnetoresistive Random-Access Memories
Probability Distribution of the Write-Error Rate of Voltage-Controlled Magnetoresistive Random-Access Memories
复制标题
压控磁阻随机存取存储器写入错误率的概率分布
DOI：
10.1103/physrevapplied.16.064068
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发表时间：
2021
影响因子：
4.6
通讯作者：
Imamura Hiroshi
中科院分区：
文献类型：
--
作者：
Arai Hiroko;Hirofuchi Takahiro;Imamura Hiroshi
在这项研究中，我们从理论上探讨了电压控制磁阻随机存取存储器（VC MRAM）的写错误率（WER）的概率分布。的概率密度函数（PDF）的WER的分析获得使用变量的变化技术与假设的VC MRAM的各向异性常数遵循正态分布。此外，我们假设一个单一的存储器单元的WER形成一个抛物线的各向异性常数的函数，从数值模拟通过求解朗道-Lifshitz-吉尔伯特方程的基础上的宏自旋模型。理论分析有助于识别PDF的类型：在最小WER处具有峰值的单调递减函数和具有局部最大值的函数。
In this study, we theoretically explore the probability distribution of the write-error rate (WER) of a voltage-controlled magnetoresistive random-access memory (VC MRAM). A probability density function (PDF) of the WER is analytically obtained using the change-of-variable technique with the assumption that the anisotropy constant of the VC MRAM follows the normal distribution. Furthermore, we assume that the WER of a single memory cell forms a parabola as a function of the anisotropy constant, resulting from numerical simulations by solving the Landau-Lifshitz-Gilbert equation based on the macrospin model. Theoretical analysis facilitates in identifying types of the PDF: a monotonic decreasing function with a peak at the smallest WER, and a function with local maximum.