Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells.
Faradaic currents during electroforming of resistively switching Ag-Ge-Se type electrochemical metallization memory cells.
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DOI：
10.1039/b901026b
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发表时间：
2009-07
期刊：
影响因子：
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通讯作者：
C. Schindler;I. Valov;R. Waser
中科院分区：
文献类型：
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作者：
C. Schindler;I. Valov;R. Waser
在各种材料中，由于电化学丝的形成和溶解而产生的电阻转换是可以观察到的。大多数情况下，需要电铸工艺来修饰活性材料并形成第一丝。本文研究了Ag/Ag-Ge-Se/Pt存储单元的形成过程和小电流阻性开关。与大多数其他电阻开关存储器件不同，需要第一个电流-电压循环来降低硫化物层中的金属含量。测量了薄膜的法拉第电流随温度和扫描速度的变化，并估算了薄膜中的金属含量。在形成后，观察到写入电流仅为1nA的阻性开关，证明了以超低功耗制造存储单元的可行性。
Resistive switching due to electrochemical filament formation and dissolution is observed in a variety of materials. Mostly, an electroforming process is required to modify the active material and form a first filament. In this study, the forming process and low current resistive switching in Ag/Ag-Ge-Se/Pt memory cells was investigated. In contrast to most other resistively switching memory devices, the first current-voltage cycle was needed to reduce the metal content in the chalcogenide layer. Temperature dependent and sweep-rate dependent measurements of the faradaic current were performed, and the metal content in the Ag-Ge-Se thin film was estimated. After forming, resistive switching with a write current of only 1 nA was observed demonstrating the feasibility of the fabrication of memory cells with ultra low power consumption.