Solution of the Poisson-Schrodinger problem for a single-electron transistor
Solution of the Poisson-Schrodinger problem for a single-electron transistor
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DOI：
10.1103/physrevb.61.4461
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发表时间：
2000-02-15
影响因子：
3.7
通讯作者：
Adamowski, J
中科院分区：
文献类型：
--
作者：
Bednarek, S;Szafran, B;Adamowski, J
用泊松方程和薛定谔方程的自洽方法解决了垂直门控量子点电子性质的定量描述问题。计算了束缚势，确定了单电子隧穿的条件。得到了源漏电压V-sd = 0时12个单电子电流峰随栅电压V-g的变化关系，V-g - V-sd平面上的菱形区域的边界，以及外磁场下的电流-栅电压特性，与实验结果吻合较好.
An outstanding problem of a quantitative description of electronic properties of a vertical gated quantum dot has been solved by a self-consistent approach to the Poisson and Schrodinger equations. We have calculated the confinement potential and determined the conditions for single-electron tunneling. A good agreement with experiment has been obtained for the 12 single-electron current peaks as a function of gate voltage V-g for source-drain voltage V-sd = 0, the bounds on diamond-shaped regions in the V-g - V-sd plane, for which the flow of current is blocked; and the current-gate voltage characteristics in an external magnetic field.