Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer
Microelectron field emitter array with focus lenses for multielectron beam lithography based on silicon on insulator wafer
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DOI：
10.1116/1.1738118
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发表时间：
2004-06
影响因子：
1.4
通讯作者：
P. N. Minh;T. Ono;N. Sato;H. Mimura;M. Esashi
中科院分区：
文献类型：
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作者：
P. N. Minh;T. Ono;N. Sato;H. Mimura;M. Esashi
我们报告了用于多电子束光刻和高密度纳米数据存储的带有聚焦透镜的单片电子场发射器阵列的设备概念、制造结果和表征。在绝缘体上硅 (SOI) 晶圆的氧化蚀刻坑上对各种材料的可单独寻址发射器阵列进行图案化。采用与发射极自对准的栅孔阵列SOI的Si有源层作为公共栅电极。在 SOI 的 Si 基底上形成的圆柱孔阵列被用作公共透镜电极。对于栅孔直径为2μm的单个Pt发射器，发射电流从栅极电压Vgate=90V开始，并在Vgate=300V和阳极电压Vanod=0.7kV时达到1.2μA电流和0.84mW束功率。发射电流稳定，波动小于10%/h。发现发射极-栅极和发射极-透镜漏电流与发射电流相比小于 1%。其聚焦特性...
We report on a device concept, results of fabrication, and characterization of a monolithic electron field emitter array with focus lenses for multielectron beam lithography and high-density nano data storage. An array of individually addressable emitters of various materials was patterned on oxidized etch pits of a silicon on insulator (SOI) wafer. Si active layer of the SOI with gate hole array that self-aligned with the emitters was used as a common gate electrode. An array of cylindrical holes formed at the Si base of the SOI was used as a common lens electrode. For a single Pt emitter with gate hole of 2 μm diameter, the emission current started at a gate voltage Vgate=90 V and reached to 1.2 μA current and 0.84 mW beam power at Vgate=300 V and anode voltage Vanod=0.7 kV. The emission current was found to be stable with a fluctuation smaller than 10%/h. The emitter-gate and emitter-lens leak currents were found to be less then 1% compared with the emission current. The focusing characteristic of the ...