Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film
Bipolar resistive switching behavior and conduction mechanisms of composite nanostructured TiO2/ZrO2 thin film
复制标题
复合纳米结构TiO2/ZrO2薄膜的双极阻变行为及传导机制
DOI：
10.1016/j.ceramint.2020.05.201
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发表时间：
2020-09-01
影响因子：
5.2
通讯作者：
Tang, Zhen-Hua
中科院分区：
文献类型：
--
作者：
Liu, Hui-Chuan;Tang, Xin-Gui;Tang, Zhen-Hua
本文采用简单、低成本的化学溶液沉积方法，在掺氟氧化鳍(FTO)/玻璃基板上制备了TiO2/ZrO2双层薄膜。本文报道了Au/TiO2/ZrO2/FTO/玻璃器件中可再现的双极电阻开关（RS）特性。本文制备的TiO2/ZrO2双层薄膜在外加电压作用下表现出可逆的双极电阻开关和单向导电性能，这是首次报道TiO2/ZrO2双层薄膜的这些特殊性能。设置符合电流后，可以观察到明显的电阻开关性能，在+ 0.1V和- 0.1V的读电压下，高/低电阻比达到100左右，连续100次循环测试后，RS性能没有明显下降。Au/TiO2/ZrO2/FTO/玻璃器件的电阻开关特性可以通过与TiO2/ZrO2双层薄膜层中空位氧缺陷相关的电子俘获/脱陷来解释。根据斜率拟合，样品的主要导电机制为欧姆机制和空间电荷限制电流机制。
In this work, TiO2/ZrO2 bilayer thin film was prepared on fluorine doped fin oxide (FTO)/glass substrates by using a simple and low-cost chemical solution deposition method. Reproducible bipolar resistive switching (RS) characteristics in Au/TiO2/ZrO2/FTO/glass devices are reported in this work. TiO2/ZrO2 bilayer thin films prepared in this work shows reversible bipolar resistive switching and unidirectional conduction performances under applying voltage and these special performances of TiO2/ZrO2 bilayer thin films was first reported. Obvious resistive switching performance can be observed after setting a compliance current, the ratio of high/ low resistance reached about 100 at a read voltage of + 0.1V and - 0.1V and the RS properties showed no obvious degradation after 100 successive cycles tests. The resistive switching characteristics of Au/TiO2/ZrO2/FTO/glass device can be explained by electron trapping/detrapping related with the vacancy oxygen defects in TiO2/ZrO2 bilayer thin film layer. According to slope fitting, the main conduction mechanisms of the sample are Ohmic and Space charge limited current mechanism.