Characterization of Random Process Variations Using Ultralow-Power, High-Sensitivity, Bias-Free Sub-Threshold Process Sensor
Characterization of Random Process Variations Using Ultralow-Power, High-Sensitivity, Bias-Free Sub-Threshold Process Sensor
复制标题
使用超低功耗、高灵敏度、无偏差亚阈值过程传感器表征随机过程变化
DOI：
10.1109/tcsi.2009.2037449
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发表时间：
2010
期刊：
影响因子：
--
通讯作者：
K. Roy
中科院分区：
文献类型：
--
作者：
Mesut Meterelliyoz;P. Song;F. Stellari;J. Kulkarni;K. Roy
我们提出了一种新的超低功耗，高灵敏度，无偏置的亚阈值工艺变化传感器，用于监测阈值电压的随机变化。所提出的传感器的特征之间的阈值电压失配紧密间隔，假定相同的晶体管使用的指数电流-电压关系的亚阈值操作。所提出的传感器的灵敏度是2.3倍，比以前的传感器在文献中报道，利用阈值以上的操作。为了进一步提高传感器的灵敏度，设计了一个工作在亚阈值区的放大级。这使得灵敏度额外增加4倍。一个测试芯片包含128个PMOS和128个NMOS器件的阵列已被制造在65 nm的体CMOS工艺技术。整个晶圆上共有28个芯片已被充分表征，并在此报告了随机阈值电压变化。
We propose a novel ultralow-power, high-sensitivity, bias-free sub-threshold process variation sensor for monitoring the random variations in the threshold voltage. The proposed sensor characterizes the threshold voltage mismatch between closely spaced, supposedly identical transistors using the exponential current-voltage relationship of sub-threshold operation. The sensitivity of the proposed sensor is 2.3× better than the previous sensor reported in the literature which utilizes above-threshold operation. To further improve the sensitivity of the proposed sensor, an amplifier stage working in the sub-threshold region is designed. This enables 4× additional increase in sensitivity. A test-chip containing an array of 128 PMOS and 128 NMOS devices has been fabricated in 65-nm bulk CMOS process technology. A total of 28 dies across the wafer have been fully characterized and the random threshold voltage variations are reported here.