Development of InGaN-based red LED grown on (0001) polar surface
Development of InGaN-based red LED grown on (0001) polar surface
复制标题
DOI：
10.7567/apex.7.071003
复制
发表时间：
2014-07-01
影响因子：
2.3
通讯作者：
Nunoue, Shinya
中科院分区：
文献类型：
--
作者：
Hwang, Jong-Ii;Hashimoto, Rei;Nunoue, Shinya
我们报道了生长在c面蓝宝石衬底上的InGaN基红色LED的光学特性。在红色LED中，通过在每个量子阱上嵌入Al含量为90%的AlGaN中间层的由4周期InGaN多量子威尔斯组成的有源层，成功地减少了由于相分离引起的蓝光发射。在629 nm波长下，在20 mA的直流电流下，光输出功率和外量子效率分别为1.1 mW和2.9%.这是第一次演示氮化物基红色LED，其光输出功率在20 mA时超过1 mW。(C)2014日本应用物理学会
We report on the optical properties of the InGaN-based red LED grown on a c-plane sapphire substrate. Blue emission due to phase separation was successfully reduced in the red LED with an active layer consisting of 4-period InGaN multiple quantum wells embedding an AlGaN interlayer with the Al content of 90% on each quantum well. The light output power and external quantum efficiency at a dc current of 20 mA were 1.1 mW and 2.9% with the wavelength of 629 nm, respectively. This is the first demonstration of a nitride-based red LED with the light output power exceeding 1 mW at 20 mA. (C) 2014 The Japan Society of Applied Physics