Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode
Enhanced random lasing from distributed Bragg reflector assisted Au-ZnO nanowire Schottky diode
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DOI：
10.1063/1.4967177
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发表时间：
2016-11
影响因子：
4
通讯作者：
S. B. Bashar;M. Suja;Wenhao Shi;Jianlin Liu
中科院分区：
文献类型：
--
作者：
S. B. Bashar;M. Suja;Wenhao Shi;Jianlin Liu
研制了一种基于SiO_2/SiN_x分布布拉格反射镜(DBR)上的Au-ZnO纳米线肖特基结的电泵浦紫外随机激光器。电学特性显示出典型的肖特基二极管的电流-电压特性。从室温电致发光测量中观察到明显的随机激光行为。与具有相似纳米线形态但没有DBR的参考器件相比，该激光器的阈值电流降低了近1.8倍，输出功率提高了4倍。性能的提高源于DBR结构的加入，它在设计的波长范围内提供了高反射率。
An electrically pumped ultraviolet random laser based on an Au-ZnO nanowire Schottky junction on top of a SiO2/SiNx distributed Bragg reflector (DBR) has been fabricated. Electrical characterization shows typical Schottky diode current-voltage characteristics. Evident random lasing behavior is observed from electroluminescence measurement at room temperature. In comparison with a reference device having similar nanowire morphology but no DBR, this laser demonstrates almost 1.8 times reduction in threshold current and 4 times enhancement in output power. The performance enhancement originates from the incorporation of the DBR structure, which provides high reflectivity in the designed wavelength range.