High-performance imido–amido precursor for the atomic layer deposition of Ta2O5
High-performance imido–amido precursor for the atomic layer deposition of Ta2O5
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用于 Ta2O5 原子层沉积的高性能亚氨基-酰胺前驱体
DOI：
10.1088/0268-1242/27/7/074003
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发表时间：
2012
影响因子：
1.9
通讯作者：
M. Leskelä
中科院分区：
文献类型：
--
作者：
T. Blanquart;V. Longo;J. Niinistö;Mikko J. Heikkilä;K. Kukli;M. Ritala;M. Leskelä
研究了一种新型的亚氨基前驱体tBuN = Ta（NEt2）3在原子层沉积Ta2O5薄膜中的应用。该前体在室温下为液体，具有良好的挥发性，并且对作为氧源的水和臭氧都具有反应性。沉积温度从125 ° C变化到475 °C。对于水和臭氧工艺，在325 °C下证实了饱和膜生长，并且当使用臭氧作为氧源时，在125 ° C和350 °C之间观察到恒定生长速率的区域。所有的薄膜在沉积状态下都是非晶的，并且在约700 °C下结晶成正交晶系的Ta2O5，而与所施加的氧源无关。X射线光电子能谱表明，在高于225 °C的温度下沉积的薄膜纯度很高。原子力显微镜显示薄膜光滑（rms < 0.3 nm）且均匀。该膜表现出的介电常数值为1.25和低漏电流。
The atomic layer deposition of Ta2O5 thin films was studied using a novel imido–amido precursor tBuN = Ta(NEt2)3. This precursor is liquid at room temperature, possesses good volatility and is reactive toward both water and ozone as the oxygen sources. The deposition temperature was varied from 125 to 475 °C. Saturated film growth was confirmed at 325 °C for both water and ozone processes, and a region of constant growth rate was observed between 125 and 350 °C when using ozone as the oxygen source. All the films were amorphous in the as-deposited state and crystallized at around 700 °C into orthorhombic Ta2O5, regardless of the applied oxygen source. X-ray photoelectron spectroscopy demonstrated high purity of the films deposited at temperatures higher than 225 °C. Atomic force microscopy revealed that the films were smooth (rms < 0.3 nm) and uniform. The films exhibited permittivity values of ∼25 and low leakage current.