Etch Rate Modification of SiO2 by Ion Damage
Etch Rate Modification of SiO2 by Ion Damage
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离子损伤对 SiO2 蚀刻速率的影响
DOI：
10.1149/1.2200307
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发表时间：
2006
影响因子：
--
通讯作者：
J. Raskin
中科院分区：
文献类型：
--
作者：
R. Charavel;J. Raskin
硼、磷、砷和氩注入氧化物的刻蚀速率增加的特点是水性和气态氢氟酸 (HF)。通过注入 Si-O 键而破坏使氧化物对 HF 更具反应性。水是氧化物蚀刻的反应产物和催化剂，其量控制着反应动力学。在水溶液中，注入和未注入氧化物之间的选择性达到了 4，但在蒸气 HF 中则增加到 200。在气相下进行 HF 蚀刻的情况下，生成的水会增加蚀刻速率。该技术开启了许多工艺的可能性，例如蚀刻停止层开发、埋槽蚀刻、MEMS 锚的定义等。(c) 2006 年电化学协会。
Increased etch rate for implanted oxide with boron, phosphorus, arsenic, and argon is characterized for aqueous and vapor hydrofluoric acid (HF). Destruction by implantation of Si-O bonds makes oxide more reactive to HF. Water being reaction product and catalyst for oxide etching, its amount controls the reaction kinetic. In aqueous solution selectivity of four between implanted and unimplanted oxide is reached but increases up to 200 in vapor HF. In the case of HF etching under vapor phase the generated water increases the etch rate. This technique opens many process possibilities such as etch stop layer development, etching of buried trenches, definition of MEMS anchors, etc. (c) 2006 The Electrochemical Society.