Quantum-Kinetic Effects in the Linear Optical Response of GaAs Quantum Wells
Quantum-Kinetic Effects in the Linear Optical Response of GaAs Quantum Wells
复制标题
GaAs 量子阱线性光学响应中的量子动力学效应
DOI：
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发表时间：
2002
期刊：
影响因子：
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通讯作者：
K. Henneberger
中科院分区：
文献类型：
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作者：
G. Manzke;K. Henneberger
研究了量子动力学效应对GaAs线性光学性质的影响。我们证明了这些效应是由对半导体Bloch方程中的散射项进行非马尔科夫处理而产生的，从而导致了多体效应对能量的依赖，从而导致了线性光学响应。散射项的非马尔科夫处理对应于多体效应的准粒子近似，其中它们与能量无关。我们比较了这两种处理方法，结果表明，准粒子处理(I)高估了激子共振的能量移动和展宽，(II)不能定量描述激子随激发强度增加的Mott跃迁。
We investigate the influence of quantum-kinetic effects on the linear optical properties of GaAs quantum wells. We demonstrate that these effects arising from a non-Markovian treatment of the scattering terms in the semiconductor Bloch equations lead in the linear optical response to a dependence of many-body effects on the energy. A non-Markovian treatment of scattering terms corresponds to a quasi-particle approximation of many-body effects, where they are independent of the energy. We compare both treatments and show that the quasi-particle treatment (i) overestimates both energy shift and broadening of the exciton resonance and (ii) fails to give quantitative description of the excitonic Mott transition with increasing excitation.