Double threshold behavior in a resonance-controlled ZnO random laser
Double threshold behavior in a resonance-controlled ZnO random laser
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DOI:
10.1063/1.4974334
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发表时间:
2017-03-01
期刊:
影响因子:
5.6
通讯作者:
Sasaki, Keiji
中科院分区:
文献类型:
--
作者:
Niyuki, Ryo;Fujiwara, Hideki;Sasaki, Keiji
We observed unusual lasing characteristics, such as double thresholds and blue-shift of lasing peak, in a resonance-controlled ZnO random laser. From the analysis of lasing threshold carrier density, we found that the lasing at 1st and 2nd thresholds possibly arises from different mechanisms; the lasing at 1st threshold involves exciton recombination, whereas the lasing at 2nd threshold is caused by electron-hole plasma recombination, which is the typical origin of conventional random lasers. These phenomena are very similar to the transition from polariton lasing to photon lasing observed in a well-defined cavity laser. (C) 2017 Author(s).