Switching local magnetization by electric-field-induced domain wall motion
Switching local magnetization by electric-field-induced domain wall motion
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DOI：
10.7567/apex.9.063004
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发表时间：
2016-03
影响因子：
2.3
通讯作者：
H. Kakizakai;F. Ando;T. Koyama;K. Yamada;M. Kawaguchi;Sanghoon Kim;Kab-Jin Kim;T. Moriyama;Daichi Chiba;T. Ono
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文献类型：
--
作者：
H. Kakizakai;F. Ando;T. Koyama;K. Yamada;M. Kawaguchi;Sanghoon Kim;Kab-Jin Kim;T. Moriyama;Daichi Chiba;T. Ono
Electric field effect on magnetism is an appealing technique for manipulating magnetization at a low energy cost. Here, we show that the local magnetization of an ultrathin Co film can be switched by simply applying a gate electric field without the assistance of any external magnetic field or current flow. The local magnetization switching is explained by nucleation and annihilation of magnetic domains through domain wall motion induced by the electric field. Our results lead to external-field-free and ultralow-energy spintronic applications.
