High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
High-Performance P-Channel Diamond Metal-Oxide-Semiconductor Field-Effect Transistors on H-Terminated (111) Surface
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DOI：
10.1143/apex.3.044001
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发表时间：
2010-01-01
影响因子：
2.3
通讯作者：
Kawarada, Hiroshi
中科院分区：
文献类型：
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作者：
Hirama, Kazuyuki;Tsuge, Kyosuke;Kawarada, Hiroshi
通过提高氢端(111)金刚石表面附近的空穴累积密度，获得了与广泛使用的(001)金刚石表面(类似于10k欧米加/平方英尺)相比较低的方阻(类似于5k欧加/平方英尺)。利用空穴积累层沟道，在p沟道金属氧化物半导体场效应晶体管(MOSFET)中获得了-850 mA/mm的高漏电流密度。此漏极电流密度是钻石FET的最高值。(111)面的高漏电流是由两个因素造成的：(111)面的高空穴载流子密度导致的低的源极和漏极电阻，以及(111)面上的高栅源电压下的高沟道迁移率。(C)2010年日本应用物理学会
Through the enhancement of hole accumulated density near hydrogen-terminated (111) diamond surfaces, low sheet resistance (similar to 5 k Omega/sq) has been obtained compared with widely used (001) diamond surfaces (similar to 10 k Omega/sq). Using the hole accumulation layer channel, a high drain current density of -850 mA/mm was obtained in p-channel metal-oxide-semiconductor field-effect transistors (MOSFETs). This drain current density is the highest value for diamond FETs. The high drain current on the (111) surface is attributed to two factors: The low source and drain resistances owing to the high hole carrier density and the high channel mobility at a high gate-source voltage on the (111) surface. (C) 2010 The Japan Society of Applied Physics