Graphene FETs with high and low mobilities have universal temperature-dependent properties.
Graphene FETs with high and low mobilities have universal temperature-dependent properties.
复制标题
具有高迁移率和低迁移率的石墨烯 FET 具有通用的温度依赖性特性。
DOI：
10.1088/1361-6528/aca981
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发表时间：
2023
期刊：
影响因子：
3.5
通讯作者：
Gosling JH
中科院分区：
文献类型：
--
作者：
Gosling JH
我们使用电荷载流子输运的唯象建模和详细的实验研究来研究电阻率ρ对一系列单层石墨烯场效应晶体管的栅极电压Vg的依赖性，这些晶体管的迁移率μ在5000和250 000 cm 2 V− 1 s− 1之间。我们在4 ~ 400 K的温度范围内的测量结果可以用普适关系式拟合
We use phenomenological modelling and detailed experimental studies of charge carrier transport to investigate the dependence of the electrical resistivity, ρ, on gate voltage, V g, for a series of monolayer graphene field effect transistors with mobilities, μ, ranging between 5000 and 250 000 cm 2 V− 1 s− 1 at low-temperature. Our measurements over a wide range of temperatures from 4 to 400 K can be fitted by the universal relation