Lateral manipulation of single Cu atoms on flat and stepped copper surfaces
Lateral manipulation of single Cu atoms on flat and stepped copper surfaces
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平面和阶梯铜表面上单个铜原子的横向操纵
DOI：
10.1116/1.581230
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发表时间：
1998
期刊：
影响因子：
--
通讯作者：
K. Rieder
中科院分区：
文献类型：
--
作者：
L. Bartels;G. Meyer;K. Rieder
我们利用扫描隧道显微镜证明了单个Cu原子可以在低温下单跳穿过阶梯和平坦的Cu表面。通过在操作过程中记录恒定电流下的尖端高度，可以测量出引起跳变的跳变长度和尖端相对于衬底晶格的位置。通过这种方式，可以解决Cu原子在Cu（111）上沿[110]移动时（取决于所选择的间隙电阻）从一个fcc位点到下一个fcc位点的长跃或在中间占据hcp位点时的短跃。在“阶梯式”Cu（211）表面上，沿[011]操作时可以观察到相邻五重点之间的跳变。
We demonstrate that single Cu atoms can be pulled in single hops across stepped and flat Cu surfaces at low temperatures using a scanning tunneling microscope. By recording the tip height at constant current during manipulation the hopping length and the position of the tip apex relative to the substrate lattice, at which a hop is induced, can be measured. By this way it is possible to resolve that a Cu atom moves during manipulation on Cu(111) along [110]—depending on the chosen gap resistance—either by long hops from one fcc adsite to the next or by short hops while intermediately occupying hcp sites. On the “stepped” Cu(211)-surface hops between adjacent fivefold adsites can be observed during manipulation along [011].