Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors
Effect of atomic layer deposition growth temperature on the interfacial characteristics of HfO2/p-GaAs metal-oxide-semiconductor capacitors
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DOI：
10.1063/1.4902963
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发表时间：
2014-12-14
影响因子：
3.2
通讯作者：
Lv, H. L.
中科院分区：
文献类型：
--
作者：
Liu, C.;Zhang, Y. M.;Lv, H. L.
本研究研究了原子层沉积 (ALD) 生长温度对使用四(乙基甲基)氨基铪前驱体的 ALD HfO2 高 k 电介质的 p-GaAs MOS 电容器界面特性的影响。通过结合电容电压 (C-V) 和 X 射线光电子能谱 (XPS) 测量，发现 ALD 生长温度在控制界面氧化物和前驱体之间的反应并最终确定界面特性方面发挥着重要作用。在 200 摄氏度下，表面氧化物的减少对于 ALD 来说并不显着，而在 300 摄氏度下生长则非常明显。相应的 C-V 特性也显示出与 ALD 温度相关，并且与 XPS 结果非常匹配。因此，适当的 ALD 工艺对于优化界面质量至关重要。 (C) 2014 AIP 出版有限责任公司。
The effect of atomic layer deposition (ALD) growth temperature on the interfacial characteristics of p-GaAs MOS capacitors with ALD HfO2 high-k dielectric using tetrakis(ethylmethyl) amino halfnium precursor is investigated in this study. Using the combination of capacitance-voltage (C-V) and X-ray photoelectron spectroscopy (XPS) measurements, ALD growth temperature is found to play a large role in controlling the reaction between interfacial oxides and precursor and ultimately determining the interface properties. The reduction of surface oxides is observed to be insignificant for ALD at 200 degrees C, while markedly pronounced for growth at 300 degrees C. The corresponding C-V characteristics are also shown to be ALD temperature dependent and match well with the XPS results. Thus, proper ALD process is crucial in optimizing the interface quality. (C) 2014 AIP Publishing LLC.