THIN GOLD FILM STRAIN-GAUGES
THIN GOLD FILM STRAIN-GAUGES
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DOI：
10.1116/1.578828
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发表时间：
1994-05-01
期刊：
影响因子：
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通讯作者：
MACLAY, GJ
中科院分区：
文献类型：
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作者：
LI, CS;HESKETH, PJ;MACLAY, GJ
研究了30、60、100和300埃厚度的金薄膜作为微型应变片。将金属薄膜热蒸发到二氧化硅涂层的硅片上，并制成尺寸为100 μ m x 70 μ m的应变片，并在最高温度为400℃下退火。将硅衬底切割成悬臂梁，通过加载梁来校准应变片。阻抗Z在5千赫到1兆赫的频率范围内测量。对于30a、60a和100a厚薄膜，在5khz时阻抗的幅度通常为1 MOMEGA，在小应变（epsilon < 2.8 X 10(-6)）时，测量因子（[DELTA\Z\/\Z\]/epsilon）为24-48。应变系数与频率无关，但在较大应变时减小。300埃厚的薄膜通常为110 ω，规格系数为2.6。利用激活隧道模拟了岛状薄膜的传导过程。灵敏度[DELTA\Z\/\Z\]/epsilon对应变响应模型考虑了激活隧穿过程中应变能的贡献。
Gold thin films, of thickness 30, 60, 100, and 300 angstrom were studied for use as miniature strain gauges. The thin metal films were thermally evaporated onto silicon dioxide coated silicon wafers and patterned into strain gauges with dimensions of 100 mum x 70 mum and annealed at a maximum temperature of 400-degrees-C. The silicon substrate was cut into cantilever beams to calibrate the strain gauges by loading the beams. The impedance, Z, was measured over a frequency range from 5 kHz to 1 MHz. For the 30, 60, and 100 A thick films the magnitude of the impedance was typically 1 MOMEGA at 5 kHz and the gauge factor ([DELTA\Z\/\Z\]/epsilon) was 24-48 at small strain (epsilon < 2.8 X 10(-6)). The gauge factor was independent of frequency but decreased at larger strains. The 300 angstrom thick films were typically 110OMEGA with a gauge factor of 2.6. The conduction process for the island-like film was modeled with activated tunneling. The sensitivity [DELTA\Z\/\Z\]/epsilon versus strain response model included a contribution from the strain energy in the activated tunneling.