Highly Thermal Stable Broadband Near-Infrared Luminescence in Ni2+-Doped LaAlO3 with Charge Compensator
Highly Thermal Stable Broadband Near-Infrared Luminescence in Ni2+-Doped LaAlO3 with Charge Compensator
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DOI：
10.1021/acsaom.3c00041
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发表时间：
2023-03
期刊：
影响因子：
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通讯作者：
J. Ueda;T. Minowa;Jian Xu;Shogo Tanaka;T. Nakanishi;T. Takeda;S. Tanabe
中科院分区：
文献类型：
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作者：
J. Ueda;T. Minowa;Jian Xu;Shogo Tanaka;T. Nakanishi;T. Takeda;S. Tanabe
制备了Ni 2+掺杂的钙钛矿型LaAlO 3陶瓷样品，并研究了其发光性能。LaAlO 3：Ni 2 +-M4+（M = Sn，Hf，Ti，Zr）钙钛矿材料由于Ni 2+：3 T2 - 3A 2跃迁，在1070 nm附近具有宽的近红外（NIR）发光峰，半高宽为150 nm。Sn 4+共掺杂的样品表现出最高的近红外发光强度。X射线吸收光谱分析表明，Sn ~（4+）共掺杂使Ni的价态由Ni ~（3+）转变为Ni ~（2+）。LaAlO 3：Ni 2 +-Sn 4+在300 K处的发光峰波长最短（λem= 1070 nm），且在荧光强度的温度依赖性方面表现出最高的猝灭温度，T50%为608 K，这是由于其激活能在所有Ni 2+掺杂的近红外荧光粉中最大。基于T50%vsPL峰能量曲线中的正趋势，可以得出结论，在几乎所有的Ni 2+荧光粉中，主要的猝灭过程是热激活交叉过程。Ga离子取代Al位后，发光峰波长从1070 nm连续移动到1235 nm。
Ni2+-doped LaAlO3perovskite ceramic samples with a charge compensator (M4+) were prepared and their luminescent properties were investigated. The LaAlO3:Ni2+–M4+(M = Sn, Hf, Ti, Zr) perovskites show a broad near-infrared (NIR) luminescence peaking at around 1070 nm with 150 nm fwhm due to the Ni2+:3T2-3A2transition. The Sn4+-codoped one showed the highest NIR luminescence intensity. The valence state of major Ni ions is changed from Ni3+to Ni2+by codoping with Sn4+based on X-ray absorption spectroscopy. The LaAlO3:Ni2+–Sn4+shows the shortest luminescence peak wavelength (λem= 1070 nm) at 300 K due to the strong crystal field and also shows the highest quenching temperature,T50%of 608 K in the temperature dependence of PL intensity, due to the largest activation energy among the Ni2+-doped NIR phosphors ever reported. Based on the positive trend in the plot ofT50%vs PL peak energy, it is concluded that the dominant quenching process in almost all Ni2+phosphors is the thermally activated crossover process. It is also demonstrated that the luminescence peak wavelength is shifted from 1070 to 1235 nm continuously by substituting Ga ions for the Al site.