Erbium in oxygen‐doped silicon: Electroluminescence
Erbium in oxygen‐doped silicon: Electroluminescence
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掺氧硅中的铒：电致发光
DOI：
10.1063/1.359059
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发表时间：
1995
影响因子：
3.2
通讯作者：
A. Polman
中科院分区：
文献类型：
--
作者：
S. Lombardo;S. U. Campisano;G. N. Hoven;A. Polman
由于Er 3+的4f内跃迁，在注入铒的掺氧硅（27 at. % O）中证实了1.54 μm的室温电致发光。通过偏置金属-（Si：O，Er）-p+硅二极管电激发发光。30 nm厚的Si：O，Er薄膜是通过SiH 4和N2 O的化学气相沉积沉积在硅衬底上的非晶层，通过离子注入Er掺杂到浓度高达1.5at. %，并在快速热退火炉中退火。最强的电致发光在击穿条件下在反向偏压下在400 °C退火的样品中获得，并且其归因于从Si注入到Si：O，Er层中的热载流子对铒的碰撞激发。详细研究了二极管的电特性，并将其与电致发光特性联系起来。得到的碰撞激发截面的下限为106 ×10−16 cm 2。
Room‐temperature electroluminescence at 1.54 μm is demonstrated in erbium‐implanted oxygen‐doped silicon (27 at. % O), due to intra‐4f transitions of the Er3+. The luminescence is electrically stimulated by biasing metal‐(Si:O, Er)‐p+ silicon diodes. The 30‐nm‐thick Si:O, Er films are amorphous layers deposited onto silicon substrates by chemical‐vapor deposition of SiH4 and N2O, doped by ion implantation with Er to a concentration up to ≊1.5 at. %, and annealed in a rapid thermal annealing furnace. The most intense electroluminescence is obtained in samples annealed at 400 °C in reverse bias under breakdown conditions and it is attributed to impact excitation of erbium by hot carriers injected from the Si into the Si:O, Er layer. The electrical characteristics of the diode are studied in detail and related to the electroluminescence characteristics. A lower limit for the impact excitation cross section of ≊6×10−16 cm2 is obtained.