Photoelectrochemical and impedance characteristics of specular hematite. 2. Deep bulk traps in specular hematite at small a.c. frequencies
Photoelectrochemical and impedance characteristics of specular hematite. 2. Deep bulk traps in specular hematite at small a.c. frequencies
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DOI：
10.1021/j100334a034
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发表时间：
1988-11
期刊：
影响因子：
--
通讯作者：
J. Leduc;S. M. Ahmed
中科院分区：
文献类型：
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作者：
J. Leduc;S. M. Ahmed
如果考虑到亥姆霍兹层上的电压降，那么在与深能级阱发射率相比较小的交流频率下，反平方电容与无表面状态的空间电荷层的施加电位之间的关系可以用来提取（浅）供体密度、平带电位、阱能级的位置和深能级密度。用Fe203/电解质界面说明了这一点。讨论了提取这些参数的数值计算方法。
The relationship between the inverse square capacitance, at ac frequencies that are small compared to the deep level trap emission rate, and the applied potentialfor a space chargelayer free of surface states can be used to extract the (shallow) donor density, the flat-band potential, position of the trap level, and the deep trap density if the voltage drop across the Helmholtz layer is taken into account. This is illustrated with the Fe203/electrolyte interface. A numerical procedureto extract these parameters is discussed.