Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells
Low-temperature and effective ex situ group V doping for efficient polycrystalline CdSeTe solar cells
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DOI：
10.1038/s41560-021-00848-z
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发表时间：
2021-06-24
期刊：
影响因子：
56.7
通讯作者：
Yan, Feng
中科院分区：
文献类型：
--
作者：
Li, Deng-Bing;Yao, Canglang;Yan, Feng
CdTe太阳能电池技术是太阳能行业中成本最低的发电方法之一，得益于快速CdTe吸收剂沉积，CdCl 2处理和Cu掺杂。然而，Cu掺杂具有低的光电压和不稳定性的问题。因此，将V族元素掺杂到CdTe中是解决这些挑战的有希望的途径。虽然高温原位V族掺杂的CdSeTe器件已经证明效率超过20%，但它们面临的障碍包括沉积后掺杂激活过程、短载流子寿命和低激活比。在这里，我们展示了低温和有效的非原位V族掺杂的CdSeTe太阳能电池使用V族氯化物。在AsCl_3掺杂的CdSeTe太阳电池中，掺杂激活率可达5.88%，空穴密度可达2 × 10 ~（15）cm ~（-3）以上，载流子寿命大于20 ns。因此，与Cu掺杂的CdSeTe太阳能电池的最高开路电压852 mV相比，非原位As掺杂的CdSeTe太阳能电池显示出类似于863 mV的开路电压。现在，Li等人设计了一种基于V族氯化物溶液和低温退火的非原位掺杂方法。
CdTe solar cell technology is one of the lowest-cost methods of generating electricity in the solar industry, benefiting from fast CdTe absorber deposition, CdCl2 treatment and Cu doping. However, Cu doping has low photovoltage and issues with instability. Doping group V elements into CdTe is therefore a promising route to address these challenges. Although high-temperature in situ group V doped CdSeTe devices have demonstrated efficiencies exceeding 20%, they face obstacles including post-deposition doping activation processes, short carrier lifetimes and low activation ratios. Here, we demonstrate low-temperature and effective ex situ group V doping for CdSeTe solar cells using group V chlorides. For AsCl3 doped CdSeTe solar cells, the dopant activation ratio can be 5.88%, hole densities reach >2 x 10(15) cm(-3) and carrier lifetime is longer than 20 ns. Thus, ex situ As doped CdSeTe solar cells show open-circuit voltages similar to 863 mV, compared to the highest open-circuit voltage of 852 mV for Cu doped CdSeTe solar cells.Doping CdTe solar cells with group V elements could overcome the limitations in voltage output and device stability of copper doping, yet implementation remains challenging. Now, Li et al. have devised an ex situ doping approach that is based on group V chloride solutions and low-temperature annealing.