Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes based on polyfluorene blends

Self-assembly surface modified indium-tin oxide anodes for single-layer light-emitting diodes based on polyfluorene blends
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基于聚芴共混物的单层发光二极管自组装表面改性氧化铟锡阳极

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发表时间:
2003
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通讯作者:
F. Cacialli
F. Cacialli
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作者:
J. Morgado;N. Barbagallo;A. Charas;M. Matos;L. Alacer;F. Cacialli

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研究了高极性分子自组装氧化铟锡表面对聚荧烯共混铝阴极单层发光二极管(LED)性能的影响。我们发现,这种LED的效率和光输出与含有掺杂聚苯乙烯磺酸的空穴注入层的LED相当,有时甚至更好。这一效应归因于铟锡氧化物的偶极诱导功函数修正。
We study the effect of indium-tin oxide surface modification by self assembling of highly polar molecules on the performance of single-layer light-emitting diodes (LEDs) fabricated with polyfluorene blends and aluminium cathodes. We find that the efficiency and light-output of such LEDs is comparable to, and sometimes better than, the values obtained for LEDs incorporating a hole injection layer of poly(3,4-ethylene dioxythiophene) doped with polystyrene sulphonic acid. This effect is attributed to the dipole-induced work function modification of indium-tin oxide.