Metrology tools for EUVL-source characterization and optimization

Metrology tools for EUVL-source characterization and optimization
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用于 EUVL 源表征和优化的计量工具

DOI:
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发表时间:
2003
期刊:
SPIE Advanced Lithography
影响因子:
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通讯作者:
L. Juschkin
L. Juschkin
中科院分区:
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文献类型:
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作者:
Max C. Schuermann;T. Missalla;K. Mann;S. Kranzusch;R. Klein;F. Scholze;G. Ulm;R. Lebert;L. Juschkin

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研制合适的辐射源是极紫外光刻技术面临的一大挑战。为了优化这些源并确定系统设计和系统集成所需的参数,必须根据绝对带内功率、极紫外光谱区和带外光谱区的光谱分布、发射体积的空间分布和发射的角度分布来表征这些源。此外,还必须对来源碎片进行调查。因此,JENOPTIK MikroTechnik GmbH正在与Goettingen激光实验室、Physikalisch-Technische Bundesanstalt(PTB)和AIXUV GmbH合作,为EUVL源特性和优化开发现成的计量工具。详细介绍了用于EUV源表征的一套工具,以及用于校准和测量程序的概念。
The development of suitable radiation sources is a major challenge for extreme ultraviolet lithography (EUVL). For the optimization of these sources and for the determination of the parameters needed for the system design and the system integration these sources have to be characterized in terms of the absolute in-band power, the spectral distribution in the EUV spectral region and the out-band spectral regions, the spatial distribution of the emitting volume and the angular distribution of the emission. Also the source debris has to be investigated. Therefore, JENOPTIK Mikrotechnik GmbH is co-operating with the Laser Laboratorium Goettingen, the Physikalisch-Technische Bundesanstalt (PTB) and the AIXUV GmbH in developing ready-for-use metrology tools for EUVL source characterization and optimization. The set of the tools employed for EUV-source characterization is presented in detail as well as concepts of for calibration and measurement procedures.