Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma
Role of Hydrogen in Dry Etching of Silicon Carbide Using Inductively and Capacitively Coupled Plasma
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DOI：
10.1143/jjap.44.3817
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发表时间：
2005-06
影响因子：
1.5
通讯作者：
Hidenori Mikami;T. Hatayama;H. Yano;Y. Uraoka;T. Fuyuki
中科院分区：
文献类型：
--
作者：
Hidenori Mikami;T. Hatayama;H. Yano;Y. Uraoka;T. Fuyuki
研究了电感耦合等离子体与CHF3和SF6气体腐蚀SiC的机理。讨论了O2和H2气体对蚀刻性能的影响。通过优化氢气流速条件，我们可以证实蚀刻速率的提高。最佳添加H2气体也能改善表面粗糙度。XPS分析表明，经SF6气体蚀刻后，表面形成了一层氟碳薄膜。表面氟化物原子浓度从28at降至8at。%通过加入H2气体。H2退火将表面氟化物浓度抑制到3 at.%以下。这种加工技术对于SiC器件的制造是非常有效的。
We investigated the etching mechanism of SiC using inductively and capacitively coupled plasma with CHF3 and SF6 gases. We discussed the effects of O2 and H2 gases on etching properties. By optimizing the conditions of H2 flow rate, we could confirm the improvement in etching rates. Surface roughness was also improved by the optimum addition of H2 gas. Analysis by XPS revealed that a fluorocarbon film was formed on the surface after etching with SF6 gas. Surface fluoride atomic concentration was reduced from 28 to 8 at.% by the addition of H2 gas. A H2 annealing suppressed the fluoride concentration of surface to less than 3 at.%. This processing technique is very effective for the fabrication of SiC devices.