Electrical conduction studies on Bi2Te3 thin films
Electrical conduction studies on Bi2Te3 thin films
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DOI：
10.1016/j.jcrysgro.2005.04.077
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发表时间：
2005-08-01
影响因子：
1.8
通讯作者：
Subbarayan, A
中科院分区：
文献类型：
--
作者：
Sathyamoorthy, R;Dheepa, J;Subbarayan, A
厚度为350-3300埃的真空蒸镀Al-Bi-2-Te-3-Al薄膜夹层体系在不同温度(300-483 K)下的直流导电机制被发现为Richardson-Schottky型。样品显示出 Log J 与 F-1/2 的依赖性，由此评估了场降低系数 beta。确定势垒的高度Phi(0)。研究了活化能随施加电压和温度的变化，并对结果进行了讨论。根据 C-V 分析，发现平带电势和电离电荷密度分别为 2.37 eV 和 7.992 x 1027 cm(4)。采用热探针法来鉴定这些薄膜的导电类型，结果发现它们是p型的。 (c) 2005 Elsevier B.V. 保留所有权利。
The DC electrical conduction mechanism in vacuum evaporated Al-Bi-2-Te-3-Al thin film sandwich system in the thickness range 350-3300 angstrom at different temperatures (300-483 K) was found to be Richardson-Schottky type. The samples showed a Log J vs. F-1/2 dependence, from which the field lowering coefficient beta was evaluated. The height Phi(0) of the potential barrier was determined. Variation of activation energy with applied voltages and temperatures was investigated and the results are discussed. From the C-V analysis the flat band potential and the ionized charge density was found to be 2.37 eV and 7.992 x 1027 cm(4), respectively. Hot probe method was employed to identify the type of conduction in these films and are found to be p-type. (c) 2005 Elsevier B.V. All rights reserved.