Distributed Spintronic/CMOS Sensor Network for Thermal-Aware Systems
Distributed Spintronic/CMOS Sensor Network for Thermal-Aware Systems
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DOI：
10.1109/tvlsi.2020.2981443
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发表时间：
2020-06
影响因子：
2.8
通讯作者：
Abdelrahman G. Qoutb;E. Friedman
中科院分区：
文献类型：
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作者：
Abdelrahman G. Qoutb;E. Friedman
IC技术的最新发展依赖于器件缩放和3-D集成，导致数十亿器件压缩到一个小区域内。由于高功率密度引起的温度升高，这些趋势降低了系统的寿命和可靠性。基于热特性动态管理系统对于缓解此问题非常重要。提出了一种由数百个分布式热传感器组成的片上热感知系统。描述了一种基于混合自旋电子/CMOS的热传感器，其利用反平行磁性隧道结的热响应和小面积。该传感器单元仅消耗500 pJ读取1024个热传感器节点，并生成由32 × 32$热传感器组成的系统的热图。在0 °C ~ 85 °C的温度范围内，该传感器的热线性（R^{2}$）可达0.983，热灵敏度为1.91 mV/K，功耗为32 μ W。
Recent developments in IC technology rely on device scaling and 3-D integration, resulting in billions of devices compacted into a small area. These trends degrade the lifetime and reliability of the system due to an increase in temperature caused by high power densities. Dynamically managing a system based on the thermal characteristics is important to mitigate this issue. An on-chip thermal-aware system composed of hundreds of distributed thermal sensors is proposed. A hybrid spintronic/CMOS-based thermal sensor is described that exploits the thermal response and small area of an antiparallel magnetic tunnel junction. The sensor cell consumes as little as 500 pJ to read 1024 thermal sensor nodes and generates a thermal map of a system composed of $32 \times 32$ thermal sensors. The sensor cell exhibits a thermal linearity ( $R^{2}$ ) up to 0.983 and a thermal sensitivity of 1.91 mV/K over the commercial temperature range of 0 °C to 85 °C while consuming $32~\mu \text{W}$ .