Collimated magnetron sputter deposition
Collimated magnetron sputter deposition
复制标题
准直磁控溅射沉积
DOI：
10.1116/1.577531
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发表时间：
1991
期刊：
影响因子：
--
通讯作者：
J. Cuomo
中科院分区：
文献类型：
--
作者：
S. Rossnagel;D. J. Mikalsen;H. Kinoshita;J. Cuomo
为大型磁控溅射沉积系统开发了一种与剥离图案化技术和空穴填充技术兼容的薄膜沉积技术。这项技术允许使用传统的剥离光刻技术对铜膜以及其他相关的金属或合金系统进行图案化溅射沉积。为了克服在磁控管操作的正常范围内普遍存在的气体散射效应，并通过在掩模的侧面涂覆来阻止光致抗蚀剂掩模的剥离，在磁控阴极附近设置了空心阴极电子源，其允许阴极在低10−4Torr范围内以全功率运行(即，溅射)。在这种气压下，溅射原子的平均自由程大大超过了典型的阴极到样品的投掷距离5-7厘米。为了克服溅射靶的宽度和发射的、溅射的原子的余弦分布，在样品上方放置一列准直管以响应。
A technique to deposit films compatible with lift‐off patterning techniques and hole filling has been developed for large magnetron sputter deposition systems. This technique allows the patterned sputter deposition of Cu films, as well as other relevant metal or alloy systems, using conventional lift‐off lithography techniques. To overcome the gas scattering effects which are prevalent in the normal range of magnetron operation and which would prohibit lift‐off of a photoresist mask by coating the sides of the mask, a hollow cathode electron source has been implemented near the magnetron cathode which allows operation (i.e., sputtering) of the cathode at full power in the low 10−4 Torr range. At this pressure, the mean free path for the sputtered atoms greatly exceeds the typical cathode‐to‐sample throw distance of 5–7 cm. To overcome the broadness of the sputtering target and the cosine‐like distribution of the emitted, sputtered atoms, an array of collimating tubes is placed just above the sample to res...