26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer

26 Gbit/s Direct Modulation of AlGaInAs/InP Lasers with Ridge-Waveguide Structure Buried by Benzocyclobutene Polymer
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DOI：
10.1109/iciprm.2009.5012445
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发表时间：
2009-05
期刊：
2009 IEEE International Conference on Indium Phosphide & Related Materials
影响因子：
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通讯作者：
H. Yagi;K. Koyama;Y. Onishi;H. Yoshinaga;H. Ichikawa;N. Kaida;T. Nomaguchi;K. Hiratsuka;K. Uesaka
H. Yagi;K. Koyama;Y. Onishi;H. Yoshinaga;H. Ichikawa;N. Kaida;T. Nomaguchi;K. Hiratsuka;K. Uesaka
中科院分区：
其他
文献类型：
--
作者：
H. Yagi;K. Koyama;Y. Onishi;H. Yoshinaga;H. Ichikawa;N. Kaida;T. Nomaguchi;K. Hiratsuka;K. Uesaka

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实现了由苯并环丁烯聚合物埋埋的脊波导结构（脊宽为1.0°m）的1.3°m波长AlGaInAs/InP分布反馈激光器的26 Gbit/s直接调制。该脊波导结构获得了超过20 GHz的高电带宽。因此，在25°C的测量温度下，确认了一个清晰的眼界，消光比为6 dB。
26 Gbit/s direct modulation of 1.3 °m wavelength AlGaInAs/InP distributed feedback lasers with the ridge-waveguide structure (ridge width of 1.0 °m) buried by the benzocyclobutene polymer was achieved. The high electrical bandwidth of more than 20 GHz was acquired with this ridge-waveguide structure. Consequently, a clear eye-opening with extinction ratio of 6 dB was confirmed in the measurement temperature of 25 °C.