Fabricating over 7%-efficient Sb2(S,Se)3 thin-film solar cells by vapor transport deposition using Sb2Se3 and Sb2S3 mixed powders as the evaporation source
Fabricating over 7%-efficient Sb2(S,Se)3 thin-film solar cells by vapor transport deposition using Sb2Se3 and Sb2S3 mixed powders as the evaporation source
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制造%20over%207%-效率%20Sb-2(S,Se)(3)%20薄膜%20太阳能%20细胞%20by%20蒸气%20运输%20沉积%20使用%20Sb2Se3%20和%20Sb2S3%20混合%20粉末%20as
DOI:
10.1016/j.jpowsour.2021.229737
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发表时间:
2021-03-07
影响因子:
9.2
通讯作者:
Akiyama, Hidefumi
中科院分区:
文献类型:
--
作者:
Hu, Xiaobo;Tao, Jiahua;Akiyama, Hidefumi
In this study, Sb-2(S,Se)(3) thin films are fabricated using the vapor transport deposition (VTD) method, with Sb2Se3 and Sb2S3 mixed powders as the evaporation source. The performance of the corresponding glass/ITO/CdS/Sb-2(S,Se)(3)/Au solar cells are found to be correlated to the mass ratio between Sb2S3 and the overall powder mixture. The properties of the Sb-2(S,Se)(3) thin films and cell devices adopting four different Sb2S3 mass ratios (x = 0.1, 0.25, 0.5 and 0.75) are compared. Further, the electrical properties - from dark and light J-V measurements; structural properties - from X-ray diffraction and scanning electron microscope measurements; and carrier-recombination rates at the buffer/absorber interface in the space-charge region (SCR) and in the quasineutral region - from temperature-illumination-dependent open-circuit voltage (VOC) measurements - are compared. It is found that a Sb-2(S,Se)(3) solar cell with a Sb2S3 mass ratio of 0.25 had optimal crystallinity, the lowest density of deep traps and the smallest carrier-recombination rates at the interface, leading to a high efficiency of 7.31%.