Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
Impact of heat treatment process on threshold current density in AlGaN-based deep-ultraviolet laser diodes on AlN substrate
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DOI：
10.35848/1882-0786/abf443
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发表时间：
2021-05-01
影响因子：
2.3
通讯作者：
Amano, Hiroshi
中科院分区：
文献类型：
--
作者：
Kushimoto, Maki;Zhang, Ziyi;Amano, Hiroshi
利用电致发光成像技术分析了AlN基深紫外激光二极管的电致发光均匀性。虽然观察到不均匀的EL图案，但通过改变p电极的位置来改善均匀性。通过抑制EL的不均匀性，也降低了阈值电流密度。阴极发光分析表明，这种不均匀性的原因是有源层的退化和梅萨结构形成后高温快速热退火形成的发光不均匀性。
The electroluminescence (EL) uniformity of AlGaN-based deep UV laser diodes on AlN substrate was analyzed by using the EL imaging technique. Although nonuniform EL patterns were observed, the uniformity was improved by changing the position of the p-electrode. The threshold current density was also reduced by suppressing the inhomogeneity of the EL. Cathodoluminescence analysis revealed that the cause of the non-uniformity is the degradation of the active layer and the nonuniformity emission formed by rapid thermal annealing at high temperature after mesa structure formation.