Enhanced flux-pinning performance of YBCO films derived from a fluorine-free sol-gel process with ceria addition

Enhanced flux-pinning performance of YBCO films derived from a fluorine-free sol-gel process with ceria addition
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添加二氧化铈的无氟溶胶-凝胶工艺提高了 YBCO 薄膜的通量钉扎性能

DOI:
10.1016/j.ceramint.2018.10.060
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发表时间:
2019
影响因子:
5.2
通讯作者:
Zhang Pingxiang
Zhang Pingxiang
中科院分区:
材料科学1区
文献类型:
--
作者:
Lei Li;Zhang Zhao;Wang Xiuting;Zhao Gaoyang;Jia Jiqiang;Duan Zongfan;Li Ying;Jin Lihua;Li Chengshan;Zhang Pingxiang

文献摘要

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在这项工作中,报道了一种简便有效的方法,可以显着提高 YBCO 薄膜的通量钉扎性能。采用无氟溶胶-凝胶法并添加一定量的二氧化铈,在LaAlO3(LAO)单晶衬底上制备了YBCO/CeO2复合薄膜。在YBCO薄膜的成核和生长过程中,CeO2与YBCO前驱体中的含钡相发生反应,生成纳米尺寸的BaCeO3相,从而保留了多余的Y2O3和CuO相,导致Cu原子错误堆积,形成Cu-O平面的堆垛层错,这一点已被XRD、TEM、SEM和EDS结果证明。研究了临界电流密度(Jc)和磁通钉扎力(Fp)随二氧化铈添加量的变化,结果表明,二氧化铈添加量为5mol%的YBCO薄膜在相同温度和外加磁场下表现出最高的J和最强的F。此外,堆垛层错有效降低了YBCO薄膜的Jco对外加磁场的依赖程度,尤其是在低温下。
In this work, a facile and effective method which can significantly improve the flux-pinning performance of YBCO films was reported. YBCO/CeO2composite films were prepared on LaAlO3(LAO) single crystal substrates through a fluorine-free sol-gel approach with a certain amount of ceria addition. During the nucleation and growth of YBCO films, CeO2reacted with the barium-contained phase in YBCO precursors to generate the nanosized BaCeO3phase and thus the redundant Y2O3and CuO phases remained, leading to the wrong stacking of Cu atoms to form the stacking faults of Cu-O planes, which has been demonstrated by XRD, TEM, SEM and EDS results. The variation of critical current density (Jc) and flux-pinning force (Fp) with the percentage of ceria addition was investigated, and the results show that YBCO film with the amount of 5 mol% of ceria addition exhibits the highestJcand the strongestFpat the same temperature and applied magnetic fields. In addition, the stacking faults effectively reduced the degree of dependency ofJcof YBCO film on the applied magnetic field especially at low temperature.