Synthesis and optical properties of silicon nanowires grown by different methods
Synthesis and optical properties of silicon nanowires grown by different methods
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DOI：
10.1007/s00339-006-3708-8
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发表时间：
2006-11-01
影响因子：
2.7
通讯作者：
Robertson, J.
中科院分区：
文献类型：
--
作者：
Colli, A.;Hofmann, S.;Robertson, J.
本文综述了硅纳米线的生长和表征的最新研究成果。气相沉积技术被认为是，包括化学气相沉积（CVD），等离子体增强化学气相沉积（PECVD），高温退火，和热蒸发。我们提出了SiNW生产的补充方法。我们研究了低温（低至300摄氏度）的选择性成核的硅纳米线的Au催化的CVD和PECVD。在高温炉中通过热气相沉积从Si/SiO粉末获得SiNW的批量生产。在这种情况下，SiNW或者通过在Au催化剂膜上冷凝，或者通过蒸汽在炉的较低温度区域中的自冷凝而生长。最后，我们还实现了控制生长的纳米图案化，多层Si/Au薄膜前体的therapy。所生产的电线进行比较，在产量，结构质量和光学性能。讨论了硅纳米线的拉曼和光致发光光谱。
We review our recent results on the growth and characterization of silicon nanowires (SiNWs). Vapour-phase deposition techniques are considered, including chemical vapour deposition (CVD), plasma-enhanced chemical vapour deposition (PECVD), high-temperature annealing, and thermal evaporation. We present complementary approaches to SiNW production. We investigate the low-temperature (down to 300 degrees C) selective nucleation of SiNWs by Au-catalysed CVD and PECVD. Bulk production of SiNWs is obtained by thermal-vapour deposition from Si/SiO powders in a high-temperature furnace. In this case, SiNWs grow either by condensing on Au catalyst films, or by self-condensation of the vapour in a lower-temperature region of the furnace. Finally, we also achieve controlled growth by thermolysis of nanopatterned, multi-layered Si/Au thin-film precursors. The as-produced wires are compared in terms of yield, structural quality, and optical properties. Raman and photoluminescence spectra of SiNWs are discussed.