High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth
High-Efficiency Conversion of Threading Screw Dislocations in 4H-SiC by Solution Growth
复制标题
通过溶液生长高效转化 4H-SiC 中的螺纹螺型位错
DOI：
10.1143/apex.5.115501
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发表时间：
2012
期刊：
影响因子：
--
通讯作者：
T.Ujihara
中科院分区：
文献类型：
--
作者：
Y.Yamamoto;S.Harada;K.Seki;A.Horio;T.Mitsuhashi;T.Ujihara
通过溶液生长在 4H-SiC 中高效转化螺旋位错 (TSD) 提供了一种获得超高质量 SiC 晶体的有效方法。通过同步加速器 X 射线形貌研究了 TSD 在轴上和离轴 4H-SiC0001 晶种上的行为。离轴硅面晶种中几乎所有的 TSD 都转化为基面上的 Frank 型堆垛层错。 TSD的转化率很大程度上受籽晶表面极性的影响。堆垛层错向晶体外部横向传播。
The high-efficiency conversion of threading screw dislocations (TSDs) in 4H-SiC by solution growth provides an efficient method of obtaining ultra high-quality SiC crystals. The behavior of TSDs on on-axis and off-axis 4H-SiC0001 seed crystals was investigated by synchrotron X-ray topography. Almost all TSDs in the off-axis Si-face seed crystal were converted to Frank-type stacking faults on the basal planes. The conversion ratio of TSDs was highly influenced by the surface polarity of the seed crystal. The stacking faults laterally propagate toward the outside of the crystal.