Helium Ion Secondary Electron Mode Microscopy For Interconnect Material Imaging

Helium Ion Secondary Electron Mode Microscopy For Interconnect Material Imaging
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用于互连材料成像的氦离子二次电子模式显微镜

DOI：
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发表时间：
2010
期刊：
影响因子：
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通讯作者：
Louise S. Barriss
Louise S. Barriss
中科院分区：
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文献类型：
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作者：
S. Ogawa;W. Thompson;L. Stern;L. Scipioni;J. Notte;L. Farkas;Louise S. Barriss

文献摘要

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最新研制的氦离子显微镜（HIM）具有0.35 nm的二次电子（SE）模式图像分辨率。利用该模式对超低k介电介质或铜互连结构进行成像，首次获得了亚纳米分辨率的独特图案尺寸和保真度信息。本文将讨论氦离子显微镜的结构和SE成像技术，使he观察方法对低k介电和双damascene铜互连技术具有特殊的价值。
The recently developed helium ion microscope (HIM) is now capable of 0.35 nm secondary electron (SE) mode image resolution. When low-k dielectrics or copper interconnects in ultra large scale integrated circuits (ULSI) interconnect structures were imaged in this mode, it was found that unique pattern dimension and fidelity information at sub-nanometer resolution was available for the first time. This paper will discuss the helium ion microscope architecture and the SE imaging techniques that make the HIM observation method of particular value to the low-k dielectric and dual damascene copper interconnect technologies.