High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
High field-effect mobility amorphous InGaZnO transistors with aluminum electrodes
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DOI：
10.1063/1.2969780
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发表时间：
2008-08-11
影响因子：
4
通讯作者：
Arakawa, Y.
中科院分区：
文献类型：
--
作者：
Na, Jong H.;Kitamura, M.;Arakawa, Y.
我们报告的设备特性的非晶铟镓锌氧化物薄膜晶体管（TFT）与铝（Al）电极。TFT表现出高性能，场效应迁移率为11.39 cm（2）/V s，亚阈值摆幅为181 mV/ decade，开关比为10（7）。通过掺杂源极/漏极接触区实现了器件性能的进一步改善，导致在低至5 V的工作电压下16.6 cm（2）/V s的增强的迁移率。（C）2008美国物理学会。
We report on the device characteristics of amorphous indium gallium zinc oxide thin-film transistors (TFTs) with aluminum (Al) electrodes. The TFTs exhibited a high performance with a field-effect mobility of 11.39 cm(2)/V s, a subthreshold swing of 181 mV/ decade, and an on-off ratio of 10(7). Further improvement in device performance was achieved by doping the source/drain contact regions, resulting in an enhanced mobility of 16.6 cm(2)/V s at an operating voltage as low as 5 V. (C) 2008 American Institute of Physics.