Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector
Demonstration of Si based InAs/GaSb type-II superlattice p-i-n photodetector
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DOI：
10.1016/j.infrared.2019.06.011
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发表时间：
2019-09-01
影响因子：
3.3
通讯作者：
Chen, Baile
中科院分区：
文献类型：
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作者：
Deng, Zhuo;Guo, Daqian;Chen, Baile
在本文中，中波红外光电探测的基础上的InAs/GaSb的II型超晶格p-i-n光电探测器直接生长在Si衬底上的演示和表征。激发功率依赖于从光致发光测量的积分强度揭示了功率系数P类似于I-0.74，表明缺陷相关的过程中发挥重要作用的光生载流子的主要复合通道。在70 K时，器件在-0.1 V偏压下的暗电流密度为2.3 A/cm（2）。暗电流的Arrhenius分析显示激活能远小于有源层带隙的一半，这表明该器件主要受表面泄漏和缺陷相关的产生-复合的限制，与光致发光分析一致。在-0.1V偏压下，探测器的50%截止波长约为5.5 μ m，峰值响应率和比探测率分别为1.2A/W和1.3 × 10（9）cm·Hz（1/2）/W。基于这些光电子学表征结果，通过优化III/V-Si界面和材料生长质量来减少缺陷被认为是该Si基T2 SL探测器朝向Si光子学平台上的低成本、大幅面MWIR探测系统的性能改进的主要因素。
In this paper, mid-wave infrared photodetection based on an InAs/GaSb type-II superlattice p-i-n photodetector grown directly on Si substrate is demonstrated and characterized. Excitation power dependence on integrated intensity from the photoluminescence measurements reveals a power coefficient of P similar to I-0.74, indicating that defects related process is playing an important role in the predominant recombination channel for photo-generated carriers. At 70 K, the device exhibits a dark current density of 2.3 A/cm(2) under - 0.1 V bias. Arrhenius analysis of dark current shows activation energies much less than half of the active layer bandgap, which suggests that the device is mainly limited by surface leakage and defect-related generation-recombination, consistent with the photoluminescence analysis. The detector shows 50% cutoff wavelength at similar to 5.5 mu m at 70 K under bias of -0.1 V. The corresponding peak responsivity and specific detectivity are 1.2 A/W and 1.3 x 10(9) cm.Hz(1/2)/W, respectively. Based on these optoelectronics characterization results, reduction of defects by optimizing the III/V-Si interface and material growth quality are argued to be the main factors for performance improvement in this Si-based T2SL detector towards low cost, large-format MWIR detection system on Si photonics platform.