Integrated multilayer GaAs lasers separated by tunnel junctions
Integrated multilayer GaAs lasers separated by tunnel junctions
复制标题
由隧道结分隔的集成多层 GaAs 激光器
DOI：
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发表时间：
1982
期刊：
影响因子：
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通讯作者：
W. Tsang
中科院分区：
文献类型：
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作者：
J. P. Ziel;W. Tsang
用分子束外延生长了由三个双异质结半导体激光器通过反向偏置p+n+隧道结串联构成的集成多层激光器。激光器的工作电流与单双异质结激光器相当，但大约是单激光器电压的三倍。
An integrated multilayer laser consisting of three double heterostructure GaAs laser diodes connected in series by reversed biased p+n+ tunnel junctions have been grown by molecular beam epitaxy. The lasers operate at currents comparable to single double heterostructure lasers but at approximately three times the single laser voltage.