Efficient current-induced domain-wall displacement in SrRuO3
Efficient current-induced domain-wall displacement in SrRuO3
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DOI：
10.1103/physrevlett.98.247204
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发表时间：
2007-06-15
影响因子：
8.6
通讯作者：
Klein, Lior
中科院分区：
文献类型：
--
作者：
Feigenson, Michael;Reiner, James W.;Klein, Lior
我们证明了电流诱导位移的铁磁畴壁在亚微米制作的图案SrRuO 3薄膜。通过测量异常霍尔效应来监测位移，其在零外加磁场下感生，并且当电流反向时其方向反向。当脱钉扎场在50 - 500 Oe之间变化时，电流密度在10（9）-10（10）A/m（2）范围内就足以使畴壁位移，这些结果表明电流位移畴壁的效率相对较高，我们认为这与该化合物中畴壁的窄宽度（约3 nm）有关。
We demonstrate current-induced displacement of ferromagnetic domain walls in submicrometer fabricated patterns of SrRuO3 films. The displacement, monitored by measuring the extraordinary Hall effect, is induced at zero applied magnetic field and its direction is reversed when the current is reversed. We find that current density in the range of 10(9)-10(10) A/m(2) is sufficient for domain-wall displacement when the depinning field varies between 50 to 500 Oe. These results indicate relatively high efficiency of the current in displacing domain walls which we believe is related to the narrow width (similar to 3 nm) of domain walls in this compound.