High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer
High-Performance Quasi-Vertical GaN Schottky Barrier Diode on Silicon Substrate with a Low Dislocation Density Drift Layer
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DOI：
10.1109/icicdt.2019.8790866
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发表时间：
2019-06
期刊：
影响因子：
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通讯作者：
Yue Li;R. Yin;M. Tao;Y. Hao;C. Wen;Maojun Wang;Jie Zhang;Xuelin Yang;B. Shen
中科院分区：
文献类型：
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作者：
Yue Li;R. Yin;M. Tao;Y. Hao;C. Wen;Maojun Wang;Jie Zhang;Xuelin Yang;B. Shen
在这封信中，基于一种新的生长策略，我们展示了一个高性能的准垂直GaN肖特基势垒二极管（SBD）上的异质外延层在硅上，与最高的电流开/关比为1010，最低的比导通电阻为0.95 mΩ·cm 2，和最低的理想因子为1.23的GaN准垂直GaN SBD的报道。这揭示了Si上GaN垂直结构器件的巨大潜力，这得益于新颖的生长策略，该策略能够同时实现低密度的穿透位错和厚外延层。
In this letter, based on a new growth strategy, we demonstrate a high-performance quasi-vertical GaN Schottky barrier diode (SBD) fabricated on the hetero-epitaxial layer on silicon, with the highest current on/off ratio of 1010, the lowest specific on-resistance of 0.95 mΩ·cm2, and the lowest ideality factor of 1.23 among the GaN quasi-vertical GaN SBD reported until now. It reveals the great potential of the GaN vertical structure device on Si thanks to the novel growth strategy, which is capable of realizing low density of threading dislocation and thick epitaxial layer at the same time.