Stress dependence of F+-center cathodoluminescence of sapphire
Stress dependence of F+-center cathodoluminescence of sapphire
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蓝宝石 F 中心阴极发光的应力依赖性
DOI：
10.1063/1.2234307
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发表时间：
2006
影响因子：
4
通讯作者：
Wenliang Zhu
中科院分区：
文献类型：
--
作者：
G. Pezzotti;K. Wan;M. C. Munisso;Wenliang Zhu
对于从蓝宝石 (α-Al2O3) c 面发射的电子激励 F+ 发光，确定了施加双轴应力时的光谱偏移率 [压电光谱 (PS) 系数]，为 Π=1.18±0.03nm∕GPa。通过使用球环双轴弯曲夹具将受控双轴应力场施加到蓝宝石薄板上，并在场发射枪扫描电子显微镜中原位测量发射的阴极发光 (CL) F+ 波段的光谱位移，可以在一定程度上确定 PS 依赖性。球环 PS 校准结果开启了应用 CL/PS 评估以利用氧空位的光学活性直接确定蓝宝石器件中未知残余应力场的可能性。
The rate of spectral shift with applied biaxial stress [piezospectroscopic (PS) coefficient] was determined for the electron-stimulated F+ luminescence emitted from the c plane of sapphire (α-Al2O3) as Π=1.18±0.03nm∕GPa. The PS dependence could be determined to a degree of precision by applying a controlled biaxial stress field to a sapphire thin plate using a ball-on-ring biaxial bending jig and by measuring in situ the spectral shift of the emitted cathodoluminescence (CL) F+ band in a field-emission-gun scanning electron microscope. The ball-on-ring PS calibration results open the possibility of applying CL/PS assessments to directly determine unknown residual stress fields in sapphire-based devices using the optical activity of its oxygen vacancies.