Silicon dioxide deposition in a microwave plasma reactor
Silicon dioxide deposition in a microwave plasma reactor
复制标题
DOI：
10.1016/s0257-8972(99)00264-9
复制
发表时间：
1999-09-01
影响因子：
5.4
通讯作者：
Goullet, A
中科院分区：
文献类型：
--
作者：
Benissad, N;Boisse-Laporte, C;Goullet, A
在2.45GHz微波等离子体反应器中用六甲基二硅氧烷（HMDSO）制备了SiO（x）C（y）H（z）薄膜。等离子体的特征在于作为HMDSO-氧气比的函数的光发射光谱。确定了由单体的解离和重组产生的物质的发射。通过红外光谱研究了薄膜的结构，并利用椭圆偏振法测定了薄膜的厚度和折射率。红外光谱和沉积速率强烈地依赖于HMDSO与O（2）的比例，而折射率相当恒定且低于预期。(C)1999年Elsevier Science S.A. All rights reserved.
SiO(x)C(y)H(z) films were deposited using hexamethyldisiloxane (HMDSO) in a 2.45 GHz microwave plasma reactor. The plasma was characterised by optical emission spectroscopy as a function of the HMDSO-to-oxygen ratio. The emission of species resulting from the dissociation and recombination of the monomer was identified. The film structure was investigated by means of FTIR spectroscopy and ellipsometry was used to determine the thickness and refractive index of the layer. The infrared spectrum and the deposition rate are strongly dependent on the HMDSO-to-O(2) ratio, whereas the refractive index is quite constant and lower than expected. (C) 1999 Elsevier Science S.A. All rights reserved.