All quantum dot mode-locked semiconductor disk laser emitting at 655 nm
All quantum dot mode-locked semiconductor disk laser emitting at 655 nm
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DOI：
10.1063/1.4894182
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发表时间：
2014-08
影响因子：
4
通讯作者：
R. Bek;G. Kersteen;H. Kahle;T. Schwarzbäck;M. Jetter;P. Michler
中科院分区：
文献类型：
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作者：
R. Bek;G. Kersteen;H. Kahle;T. Schwarzbäck;M. Jetter;P. Michler
本文报道了一种用半导体可饱和吸收镜（SESAM）锁模的半导体圆盘激光器。增益和吸收体结构都是用金属有机物气相外延法制作的，采用量子点作为有源材料的抗共振设计。一个V形腔被用来紧紧地聚焦到SESAM上，以852 MHz的重复率产生持续时间约为1 ps的脉冲。
We present a semiconductor disk laser mode-locked by a semiconductor saturable absorber mirror (SESAM) with emission in the red spectral range. Both the gain and the absorber structure are fabricated by metal-organic vapor-phase epitaxy in an anti-resonant design using quantum dots as active material. A v-shaped cavity is used to tightly focus onto the SESAM, producing pulses with a duration of about 1 ps at a repetition rate of 852 MHz.