Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates
Temperature dependence of ordered GeSi island growth on patterned Si (001) substrates
复制标题
图案化 Si (001) 衬底上有序 GeSi 岛生长的温度依赖性
DOI：
10.1063/1.2965484
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发表时间：
2008-07-28
影响因子：
4
通讯作者：
Bauer, Guenther
中科院分区：
文献类型：
--
作者：
Zhong, Zhenyang;Chen, Peixuan;Bauer, Guenther
本文给出了在不同温度下在二维坑图案化硅衬底上生长锗硅岛的统计信息。图案化衬底上的三种生长制度被确定为：（i）在低生长温度下的动力学限制生长，（ii）在中间温度范围内的有序岛生长，和（iii）在高温下的坑内的随机岛生长。提出了一个基于生长动力学的定性模型来解释这些现象。它可以作为一个指导，以实现最佳的生长条件，在图案化的衬底上的有序岛。(C)2008年美国物理学会。
Statistical information on GeSi islands grown on two-dimensionally pit-patterned Si substrates at different temperatures is presented. Three growth regimes on patterned substrates are identified: (i) kinetically limited growth at low growth temperatures, (ii) ordered island growth in an intermediate temperature range, and (iii) stochastic island growth within pits at high temperatures. A qualitative model based on growth kinetics is proposed to explain these phenomena. It can serve as a guidance to realize optimum growth conditions for ordered islands on patterned substrates. (C) 2008 American Institute of Physics.