Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot
Electrically tunable effective g-factor of a single hole in a lateral GaAs/AlGaAs quantum dot
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横向 GaAs/AlGaAs 量子点中单孔的电可调有效 g 因子
DOI：
10.1038/s42005-019-0262-1
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发表时间：
2019
期刊：
影响因子：
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通讯作者：
Terry Hargett
中科院分区：
文献类型：
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作者：
Sergei Studenikin;Marek Korkusinski;Motoi Takahashi;Jordan Ducatel;Aviv Padawer-Blatt;Alex Bogan;D. Guy Austing;Louis Gaudreau;Piotr Zawadzki;Andrew Sachrajda;Yoshiro Hirayama;Lisa Tracy;John Reno;Terry Hargett
自旋量子比特场的一个长期目标是限制自旋因子的电调谐。在这里，我们利用电偶极自旋共振（EDSR）证明它在一个门控GaAs双点器件限制一个孔。这种可调谐性是GaAs价带中强自旋轨道相互作用（SOI）的结果。SOI实现了自旋翻转点间隧穿，其与简单的自旋守恒电荷输运相结合，导致形成可调的混合自旋轨道分子态。EDSR是用来证明的差距分开的两个最低的能量状态改变其字符从一个类似的电荷到一个类似的自旋激发作为函数的interdot失谐或磁场。在类自旋区，差距可以用有效因子来表征，由于自旋-电荷杂化，该有效因子不同于体值，并且可以通过栅极电压平滑而灵敏地调节。
Electrical tunability of the-factor of a confined spin is a long-time goal of the spin qubit field. Here we utilize the electric dipole spin resonance (EDSR) to demonstrate it in a gated GaAs double-dot device confining a hole. This tunability is a consequence of the strong spin-orbit interaction (SOI) in the GaAs valence band. The SOI enables a spin-flip interdot tunneling, which, in combination with the simple spin-conserving charge transport leads to the formation of tunable hybrid spin-orbit molecular states. EDSR is used to demonstrate that the gap separating the two lowest energy states changes its character from a charge-like to a spin-like excitation as a function of interdot detuning or magnetic field. In the spin-like regime, the gap can be characterized by the effective-factor, which differs from the bulk value owing to spin-charge hybridization, and can be tuned smoothly and sensitively by gate voltages.