Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.
Bipolar resistive switching in p-type Co3O4 nanosheets prepared by electrochemical deposition.
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DOI：
10.1186/1556-276x-8-36
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发表时间：
2013-01-19
影响因子：
--
通讯作者：
Li S
中科院分区：
文献类型：
--
作者：
Younis A;Chu D;Lin X;Lee J;Li S
金属氧化物纳米片作为纳米晶体构建块在新型纳米电子学中具有潜在应用。本工作成功制备了具有双极阻变特性的Au/p型Co3O4纳米片/氧化铟锡/玻璃结构的器件。实验结果表明，该器件具有稳定的高低阻比大于25，耐久性能大于200次循环，数据保持时间大于10000s。所制造器件的如此优异的性能可以通过体膜和 Co3O4/氧化铟锡玻璃基板界面效应来解释。
Metal oxide nanosheets have potential applications in novel nanoelectronics as nanocrystal building blocks. In this work, the devices with a structure of Au/p-type Co3O4 nanosheets/indium tin oxide/glass having bipolar resistive switching characteristics were successfully fabricated. The experimental results demonstrate that the device have stable high/low resistance ratio that is greater than 25, endurance performance more than 200 cycles, and data retention more than 10,000 s. Such a superior performance of the as-fabricated device could be explained by the bulk film and Co3O4/indium tin oxide glass substrate interface effect.