Terrace-width distributions on vicinal Si(111).
Terrace-width distributions on vicinal Si(111).
复制标题
邻近 Si(111) 上的阶地宽度分布。
DOI：
10.1103/physrevlett.65.2430
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发表时间：
1990
影响因子：
8.6
通讯作者：
Ellen D. Williams
中科院分区：
文献类型：
--
作者：
Xue;J. L. Goldberg;N. C. Bartelt;T. Einstein;Ellen D. Williams
利用扫描隧道显微镜，我们定量地表征了相邻的Si（111）表面上的台阶结构，这些台阶在[112]方向上的取向偏差为1.2和2.3。测得的梯田宽度分布强烈的峰值，热漂移步骤的预测一致。然而，分布比预测的简单的梯田步骤扭结模型，表明步骤相互作用与充满活力的短程排斥窄得多。这种能量排斥的大小是从高斯拟合的数据来衡量的。分布的宽度与阶梯密度成比例，正如排斥所预期的那样，排斥随着阶梯分离的平方反比衰减。
Using scanning tunneling microscopy, we have quantitatively characterized the configurations of steps on vicinal Si (111) surfaces misoriented by 1.2 and 2.3 towards the [1 1 2] direction. The measured terrace-width distributions are strongly peaked, consistent with predictions for thermally wandering steps. However, the distributions are much narrower than predicted for the simple terrace-step-kink model, indicating that the steps interact with energetic short-range repulsions. The magnitude of this energetic repulsion is gauged from a Gaussian fit to the data. The width of the distribution scales with step density as expected for repulsions which decay as the inverse square of step separation.