Synthesis of BaZrS 3 and BaHfS 3 Chalcogenide Perovskite Films Using Single‐Phase Molecular Precursors at Moderate Temperatures
Synthesis of BaZrS 3 and BaHfS 3 Chalcogenide Perovskite Films Using Single‐Phase Molecular Precursors at Moderate Temperatures
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中温下单相分子前驱体合成 BaZrS 3 和 BaHfS 3 硫族化物钙钛矿薄膜
DOI：
10.1002/anie.202301049
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发表时间：
2023
期刊：
影响因子：
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通讯作者：
Bart, Suzanne C.
中科院分区：
文献类型：
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作者：
Pradhan, Apurva A.;Uible, Madeleine C.;Agarwal, Shubhanshu;Turnley, Jonathan W.;Khandelwal, Shriya;Peterson, Jonas M.;Blach, Daria D.;Swope, Ryan N.;Huang, Libai;Bart, Suzanne C.
硫系钙钛矿由于其优异的光电性能和稳定性而在半导体器件中获得了广泛的应用。然而，高合成温度在历史上使得这些材料与光伏器件的产生不相容。在这里，我们展示了在575 °C的硫化温度和短至1小时的硫化时间下使用单相分子前体的发光BaZrS3和BaHfS3硫属化物钙钛矿膜的溶液处理合成。使用已知的二硫化碳插入化学合成这些分子前体油墨以产生第4族金属二硫代氨基甲酸盐，并且该化学被扩展以产生之前从未报道过的物质，例如二硫代羧酸钡。这些发现，加上未来的研究，有可能产生完全解决方案处理的硫属钙钛矿薄膜的各种光电应用。
Chalcogenide perovskites have garnered interest for applications in semiconductor devices due to their excellent predicted optoelectronic properties and stability. However, high synthesis temperatures have historically made these materials incompatible with the creation of photovoltaic devices. Here, we demonstrate the solution processed synthesis of luminescent BaZrS3and BaHfS3chalcogenide perovskite films using single‐phase molecular precursors at sulfurization temperatures of 575 °C and sulfurization times as short as one hour. These molecular precursor inks were synthesized using known carbon disulfide insertion chemistry to create Group 4 metal dithiocarbamates, and this chemistry was extended to create species, such as barium dithiocarboxylates, that have never been reported before. These findings, with added future research, have the potential to yield fully solution processed thin films of chalcogenide perovskites for various optoelectronic applications.